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Electrical properties of multilayer arrays of germanium nanoclusters grown onthe silicon (001) surface at low temperature have been studied. A correlationbetween the quantum dot (QD) density estimated from STM and the chargeaccumulated by QD layers as extracted from C-V characteristics was revealed.Temperature dependence of the C-V characteristics was studied. At lowtemperatures, the hysteresis was observed. DLTS spectra measured on thestructures with different QD arrangements demonstrated essential distinctions.

Capacitance investigation of Ge nanoclusters on a silicon (001) surface grown by MBE at low temperatures