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Electric control of magnetic properties is an important challenge for modernmagnetism and spintronic development. In particular, an ability to writemagnetic state electrically would be highly beneficial. Among other methods,the use of electric field induced deformation of piezoelectric elements is apromising low-energy approach for magnetization control. We investigate thesystem of piezoelectric substrate Pb[Zr$_x$Ti$_{1-x}$]O$_3$ with CoFeoverlayers, extending the known reversible bistable electro-magnetic couplingto surface and multistate operations, adding the initial state resetpossibility. Increasing the CoFe thickness improves the magnetoresistivesensitivity, but at the expenses of decreasing the strain-mediated coupling,with optimum magnetic thin film thickness of the order of 100 nm. The simplestresistance strain gauge structure is realized and discussed as a multistatememory cell demonstrating both resistive memory (RRAM) and magnetoresistivememory (MRAM) functionalities in a single structure.

Electrical Writing of Magnetic and Resistive Multistates in CoFe Films Deposited onto Pb[Zr$_x$Ti$_{1-x}$]O$_3$