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Luminescent amorphous silicon nitride films were prepared with different hydrogen flow rates in very high frequency plasma enhanced chemical vapor deposition system. Very bright orange-red light emissions can be clearly observed with the naked eye in a bright room for the films grown at the hydrogen flow rate of 30sccm. The photoluminescence intensity of the film grown at the hydrogen flow rate of 30sccm is found to be four times higher than that of the film without hydrogen dilution. However, with further increasing the hydrogen flow rate from 30 to 90sccm, the photoluminescence intensity of the film rapidly decreases. Fourier-transform infrared absorption spectra indicate that the introduction of N-H bonds is of a key role to enhance the photoluminescence intensity of the films. Based on the measurements of structural and bonding configurations, the improved photoluminescence intensity is attributed to the well hydrogen passivation of nonradiative defect states related to N at proper hydrogen flow rates

Effects of Hydrogen on Luminescence Properties of A-Sinx Films Prepared by Vhf-Pecvd