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We present the results of the characterization of novel n-in-p planar pixel detectors, designed for the future upgrades of the ATLAS pixel system. N-in-p silicon devices are a promising candidate to replace the n-in-n sensors thanks to their radiation hardness and cost effectiveness, that allow for enlarging the area instrumented with pixel detectors.The n-in-p modules presented here are composed of pixel sensors produced by CiS connected by bump-bonding to the ATLAS readout chip FE-I3. The characterization of these devices has been performed with the ATLAS pixel read-out systems, TurboDAQ and USBPIX, before and after irradiation with 25 MeV protons and neutrons up to a fluence of 5x1015 neq/cm2. The charge collection measurements carried out with radioactive sources have proven the feasibility of employing this kind of detectors up to these particle fluences. The collected charge has been measured to be for any fluence in excess of twice the value of the FE-I3 threshold, tuned to 3200 e.The first results from beam test data with 120GeV pions at the CERN-SPS are also presented, demonstrating a high tracking efficiency before irradiation and a high collected charge for a device irradiated at 1015 neq/cm2.This work has been performed within the framework of the RD50 Collaboration

Performance of n-in-p Pixel Detectors Irradiated at Fluences up to 5x1015 neq/cm2 for the Future ATLAS Upgrades