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We have studied the surface structures of single crystalline β- FeSi2 substrate and their influence on homoepitaxial growth. After heat-treatment in ultra-high vacuum above 750 °C, where the native oxide layer (SiOx) on the substrate was removed, characteristic structures depending on the surface orientation were formed on the substrate. On the β- FeSi2 (100) substrate, the round shaped dip structures with conical elevation appeared after heat treatment above 800 °C. The composition of the dip structures was partially Fe-rich as compared with nominal β- FeSi2 composition (Si/Fe=2). These characteristic structures significantly affected the crystalline quality. They remained in the epitaxial layer after thin film growth. We also achieved homoepitaxial β- FeSi2 films on β- FeSi2 (111) substrate at the growth temperature of 700 °C and 800 °C

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Surface structures of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math>- FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth

Surface structures of β- FeSi2 formed by heat-treatment in ultra-high vacuum and their influence on homoepitaxial growth