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urface characterization of a homoepitaxial β- FeSi2 film grown on a β- FeSi2 single crystal synthesized with a temperaturegradient solution method was performed by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The annealing to remove native oxide layers on the crystal before homoepitaxial growth induced the formation of Fe-rich silicide in the surface. The XAS spectra confirm that the homoepitaxial β- FeSi2 film can be grown on the crystal, while Fe-rich silicide is partially formed. The control of the surface chemical state is important to obtain homoepitaxial films with excellent quality

physics procedia

Surface characterization of homoepitaxial <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si1.gif" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math>- FeSi2 film on <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si2.gif" display="inline" overflow="scroll"><mml:mi>β</mml:mi></mml:math>- FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy

Surface characterization of homoepitaxial β- FeSi2 film on β- FeSi2 (111) substrate by X-ray photoelectron and absorption spectroscopy