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The aim of this work is to investigate the influence of Si-doping on the optical, thermal and electrical properties of GaSb epitaxial layers. Such an influence was quantified through photoluminescence (PL), mirage effect (photothermal spectroscopy) and Hall effect measurements. Several GaSb samples, grown by Molecular Beam Epitaxy (MBE) on (100)-oriented GaAs semiinsulating substrates, with different Si-doping levels ranging from 4.95×1016at .cm−3 up to 8.11.1019at.cm−3 were tested. As a comparison, the same measurements were also performed on a GaSb non intentionally doped layer. The Hall effect data shows a monotonic decrease in carrier mobility when the hole concentration increase.The effect of band-to-band, band-impurity transitions on the PL gap E0 and the influence of high impurity concentration on the PL and absorption spectra have been also studied. Finally, the optical absorption changes induced by Si-doping on GaSb samples were investigated by photothermal deflection. It was shown that this technique allows a very precise deduction of the real interband gap energy of a semiconductor material as GaSb.Thermal conductivities were also deduced from the photothermal deflection measurements. The found values are very low due to the thermal resistivity of the layer-substrate interface but also due to the lattice-mismatch between GaSb epilayers and the GaAs substrate. However, the contribution of the free carriers to the thermal conductivity, with a high p-doping level (p>1019cm−3), could be highlighted

physics procedia

Investigation of electrical and optothermal properties of Si-doped GaSb epitaxial layers by the Hall effect, PL measurement and photothermal deflection spectroscopy