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Silicon-on-insulator (SOI) waveguides with different geometries have beenemployed to design various integrated optical components. Reducing the bendingradius of the SOI waveguides with low bending loss is essential in minimizingthe footprint of light-wave circuits. The propagating mode is less confined inthe core of the ultra-thin SOI waveguide and penetrates to substrate andcladding, leading to higher bending loss compared with conventional SOIwaveguide with the thicker guiding layer. While various bending mechanisms havebeen utilized to reduce the bending loss of conventional SOI waveguides, theultra-thin SOI waveguide bends have not been studied in detail. In this paper,we present a 60 nm-thick SOI waveguide bend based on the truncated Eaton lensimplemented by varying thickness of the guiding layer. The three-dimensionalfull-wave simulations reveal that the designed waveguide bend, with a radius of3.9 $\mu m$, reduces the bending loss from 3.3 to 0.42 dB at the wavelength of1550 nm. Moreover, the bending loss for the wavelength range of 1260-1675 nm islower than 0.67 dB while the bending loss in the C-band is lower than 0.45 dB.

Ultra-thin silicon-on-insulator waveguide bend based on truncated Eaton lens implemented by varying the guiding layer thickness