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We propose a plasmonic modulator with semiconductor gain material foroptoelectronic integrated circuits. We analyze properties of a finite-thicknessmetal-semiconductor-metal (F-MSM) waveguide to be utilized as an ultra-compactand fast plasmonic modulator. The InP-based semiconductor core allowselectrical control of signal propagation. By pumping the core we can vary thegain level and thus the transmittance of the whole system. The study of thedevice was made using both analytical approaches for planar two-dimensionalcase as well as numerical simulations for finite-width waveguides. We analyzethe eigenmodes of the F-MSM waveguide, propagation constant, confinementfactor, Purcell factor, absorption coefficient, and extinction ratio of thestructure. We show that using thin metal layers instead of thick ones we canobtain higher extinction ratio of the device.

Plasmonic finite-thickness metal-semiconductor-metal waveguide as ultra-compact modulator