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We propose and design the high confinement InP/In1-xGaxAsyP1-y semiconductorwaveguides and report the results of effective wavelength conversion based onthis platform. Efficient confinement and mode field area fluctuation atdifferent wavelength is analyzed to achieve the high nonlinear coefficient. Thenumerical results show that nearly zero phase-mismatch condition can besatisfied through dispersion tailoring of InP/In1-xGaxAsyP1-y waveguides, andthe wavelength conversion ranging over 40 nm with the maximum conversionefficiency -26.3 dB is achieved for fixing pump power 100 mW. Meanwhile, theinfluences of the doping parameter y and pumping wavelength on the bandwidthand conversion efficiency are also discussed and optimized. It is indicated theexcellent optical properties of the InP/In1-xGaxAsyP1-y waveguides and pave theway towards direct integration telecom band devices on stand semiconductorplatforms.

Performance evaluation of on-chip wavelength conversion based on InP/In$_{1-x}$Ga$_x$As$_y$P$_{1-y}$ semiconductor waveguide platforms