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We theoretically investigate the effect of <100> uniaxial strain on aGe-on-Si laser using deformation potentials. We predict a sudden and dramatic~200x threshold reduction upon applying sufficient uniaxial tensile strain tothe Ge gain medium. This anomalous reduction is accompanied by an abrupt jumpin the emission wavelength and is explained by how the light-hole band raisesrelative to the heavy-hole band due to uniaxial strain. Approximately 3.2%uniaxial strain is required to achieve this anomalous threshold reduction for1x1019 cm-3 n-type doping, and a complex interaction between uniaxial strainand n-type doping is observed. This anomalous threshold reduction represents asubstantial performance advantage for uniaxially strained Ge lasers relative toother forms of Ge band engineering such as biaxial strain or tin alloying.Achieving this critical combination of uniaxial strain and doping for theanomalous threshold reduction is dramatically more relevant to practicaldevices than realizing a direct band gap.

Anomalous Threshold Reduction from <100> Uniaxial Strain for a Low-Threshold Ge Laser