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The formation of quantum computer test structures in silicon by ionimplantation enables the characterization of spin readout mechanisms withensembles of dopant atoms and the development of single atom devices. Webriefly review recent results in the characterization of spin dependenttransport and single ion doping and then discuss the diffusion and segregationbehaviour of phosphorus, antimony and bismuth ions from low fluence, low energyimplantations as characterized through depth profiling by secondary ion massspectrometry (SIMS). Both phosphorus and bismuth are found to segregate to theSiO2/Si interface during activation anneals, while antimony diffusion is foundto be minimal. An effect of the ion charge state on the range of antimony ions,121Sb25+, in SiO2/Si is also discussed.

Critical issues in the formation of quantum computer test structures by ion implantation