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The ALICE ITS3 (Inner Tracking System 3) upgrade project and the CERN EP R&Don monolithic pixel sensors are investigating the feasibility of the TowerPartners Semiconductor Co. 65 nm process for use in the next generation ofvertex detectors. The ITS3 aims to employ wafer-scale Monolithic Active PixelSensors thinned down to 20 to 40 um and bent to form truly cylindrical halfbarrels. Among the first critical steps towards the realisation of thisdetector is to validate the sensor technology through extensivecharacterisation both in the laboratory and with in-beam measurements. TheDigital Pixel Test Structure (DPTS) is one of the prototypes produced in thefirst sensor submission in this technology and has undergone a systematicmeasurement campaign whose details are presented in this article.  The results confirm the goals of detection efficiency and non-ionising andionising radiation hardness up to the expected levels for ALICE ITS3 and alsodemonstrate operation at +20 C and a detection efficiency of 99% for a DPTSirradiated with a dose of $10^{15}$ 1 MeV n$_{\mathrm{eq}}/$cm$^2$.Furthermore, spatial, timing and energy resolutions were measured at varioussettings and irradiation levels.

Digital Pixel Test Structures implemented in a 65 nm CMOS process