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This study focuses on the properties of the B$_\text{i}$O$_\text{i}$(interstitial Boron~-~interstitial Oxygen) and C$_\text{i}$O$_\text{i}$(interstitial Carbon~-~interstitial Oxygen) defect complexes by\SI{5.5}{\mega\electronvolt} electrons in low resistivity silicon. Twodifferent types of diodes manufactured on p-type epitaxial and Czochralskisilicon with a resistivity of about 10~$\Omega\cdot$cm were irradiated withfluence values between \SI{1e15}{\per\square\centi\meter} and\SI{6e15}{\per\square\centi\meter}. Such diodes cannot be fully depleted andthus the accurate evaluation of defect concentrations and properties(activation energy, capture cross-section, concentration) from ThermallyStimulated Currents (TSC) experiments alone is not possible. In this study wedemonstrate that by performing Thermally Stimulated Capacitance (TS-Cap)experiments in similar conditions to TSC measurements and developingtheoretical models for simulating both types of B$_\text{i}$O$_\text{i}$signals generated in TSC and TS-Cap measurements, accurate evaluations can beperformed. The changes of the position-dependent electric field, the effectivespace charge density $N_\text{eff}$ profile as well as the occupation of theB$_\text{i}$O$_\text{i}$ defect during the electric field dependent electronemission, are simulated as a function of temperature. The macroscopicproperties (leakage current and $N_\text{eff}$) extracted from current-voltageand capacitance-voltage measurements at \SI{20}{\celsius} are also presentedand discussed

nuclear instruments and methods in physics research. section a, accelerators, spectrometers, detectors and associated equipment/nuclear instruments and methods in physics research. section a, accelerators, spectrometers, detectors and associated equipment

Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon