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The last decade has increasingly seen the use of silicon photomultipliers(SiPMs) instead of photomultiplier tubes (PMTs). This is due to variousadvantages of the former on the latter like its smaller size, lower operatingvoltage, higher detection efficiency, insensitivity to magnetic fields andmechanical robustness to launch vibrations. All these features make SiPMs idealfor use on space based experiments where the detectors require to be compact,lightweight and capable of surviving launch conditions. A downside with the useof this novel type of detector in space conditions is its susceptibility toradiation damage. In order to understand the lifetime of SiPMs in space, boththe damage sustained due to radiation as well as the subsequent recovery, orannealing, from this damage have to be studied. Here we present these studiesfor three different types of SiPMs from the Hamamatsu S13360 series. Both theirbehaviour after sustaining radiation equivalent to 2 years in low earth orbitin a typical mission is presented, as well as the recovery of these detectorswhile stored in different conditions. The storage conditions varied intemperature as well as in operating voltage. The study found that the annealingdepends significantly on the temperature of the detectors with those stored athigh temperatures recovering significantly faster and at recovering closer tothe original performance. Additionally, no significant effect from a reasonablebias voltage on the annealing was observed. Finally the annealing rate as afunction of temperature is presented along with various operating strategiesfor the future SiPM based astrophysical detector POLAR-2 as well as for futureSiPM based space borne missions.

Temperature dependence of radiation damage annealing of Silicon Photomultipliers