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New pixel geometries are on the rise to achieve high sensitivity innear-infrared wavelengths with silicon photomultipliers (SiPMs). We testprototypes of the tip avalanche photo-diodes, which feature a quasi-sphericalp-n junction and a high photodetection efficiency over a wide spectral range,and analyze the performance after neutron irradiation. The observed increase indark count rate is significantly smaller than for a SiPM with a conventionaldesign, indicating a good radiation hardness of the pixel geometry.

Radiation Hardness of a Wide Spectral Range SiPM with Quasi-Spherical Junction