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In this report we study the dynamics of passive quenching in a single-photonavalanche diode. Our discussion is based on a microscopic description of theelectron-hole avalanche coupled to the equivalent circuit of the device,consisting of the quench resistor and the junction capacitance. Analyticexpressions for the resulting signal shape are derived from this model forsimple electric field configurations, and efficient numerical prescriptions aregiven for realistic device geometries. Space charge effects arising from theavalanche are included using simulations. They are shown to distort the signalshape, but alter neither its basic characteristics nor the underlying quenchingmechanism.

Passive quenching, signal shapes, and space charge effects in SPADs and SiPMs