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Silicon photomultipliers (SiPMs) are highly-sensitive photodetectors emergingas the technology of choice for many applications, including large high-energyphysics experiments where they often are exposed to high radiation fluences. Inrecent years, there has been an increasing interest in assessing theperformance deterioration of such detectors after the irradiation with protonor neutron, with different fluence levels.  In this work, samples of different FBK SiPM technologies, made with differentmanufacturing technologies, were irradiated at the INFN-LNS facility (Italy)with protons reaching fluences up to $10^{12}n_{eq}/mm^2$ (1 MeV neutronequivalent) which correspond $10^{14}n_{eq}/cm^2$ to and their performanceswere characterized in detail after an approximately 30 days room temperatureannealing. The results show a significant worsening of the primary noise (darkcount rate) of the detectors, which increases with the irradiation dose,whereas the other performance parameters like the micro-cell gain, thecorrelated noise probability and the photon detection efficiency do not showsignificant variations over the investigated dose range. The breakdown voltageestimation after irradiation is another important aspect for a SiPM. In thiscontribution, we show several methods for its estimation and compare theresults. We also introduced new methodologies to characterize the performanceof the SiPMs when they present a very high level of noise.  Lastly, we also analyzed the spatial localization of the proton-induceddefects inside the device, i.e. the defects that mostly contribute to theincrease of the DCR of the device, through the emission microscopy (EMMI)technique. In particular, we analyzed the SiPMs at the single cell level,trying to identify and spatially localize the defects.

Characterization of Silicon Photomultipliers after proton irradiation up to $10^{12} n_{eq}/mm^2$