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We report precise TCAD simulations of IHEP-IME-v1 Low Gain Avalanche Diode(LGAD) calibrated by secondary ion mass spectroscopy (SIMS). Our setup allowsus to evaluate the leakage current, capacitance, and breakdown voltage of LGAD,which agree with measurements' results before irradiation. And we propose animproved LGAD Radiation Damage Model (LRDM) which combines local acceptorremoval with global deep energy levels. The LRDM is applied to the IHEP-IME-v1LGAD and able to predict the leakage current well at -30 $^{\circ}$C after anirradiation fluence of $ \Phi_{eq}=2.5 \times 10^{15} ~n_{eq}/cm^{2}$. Thecharge collection efficiency (CCE) is under development.

Leakage current simulations of Low Gain Avalanche Diode with improved Radiation Damage Modeling