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A method is proposed for determining the electric field in highly-irradiatedsilicon pad diodes using admittance-frequency (Y-f ), and current measurements(I). The method is applied to Y-f and I data from square n+p diodes of 25mm2area irradiated by 24 GeV/c protons to four 1MeV neutron equivalent fluencesbetween 3E15 cm^2 and 13E15 cm^2. The measurement conditions were: Reversevoltages between 1V and 1000V, frequencies between 100Hz and 2MHz andtemperatures of -20{\deg}C and -30{\deg}C. The position dependence of theelectric field is parameterised by a linear dependence at the two sides of thediode, and a constant in the centre. The parameters as a function of voltage,temperature and irradiation fluence are determined by fits of the model to thedata. For voltages below about 300V all data are well described by the model,and the results for the electric field agrees with expectations: Depletedhigh-field regions towards the two faces and a constant low electric field inthe centre, with values which agrees with the field in an ohmic resistor withapproximately the intrinsic resistivity of silicon. For conditions at which thelow field region disappears and the diode is fully depleted, the method fails.This happens around 300V for the lowest irradiation fluence at -30{\deg}C, andat higher voltages for higher fluences and lower temperatures. In theconclusions the successes and problems of the method are discussed.

Can the electric field in radiation-damaged silicon pad diodes be determined by admittance and current measurements?