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This paper presents the principles of operation of Resistive AC-CoupledSilicon Detectors (RSDs) and measurements of the temporal and spatialresolutions using a combined analysis of laser and beam test data. RSDs are anew type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD)technology, where the $n^+$ implant has been designed to be resistive, and theread-out is obtained via AC-coupling. The truly innovative feature of RSD isthat the signal generated by an impinging particle is shared isotropicallyamong multiple read-out pads without the need for floating electrodes or anexternal magnetic field. Careful tuning of the coupling oxide thickness and the$n^+$ doping profile is at the basis of the successful functioning of thisdevice. Several RSD matrices with different pad width-pitch geometries havebeen extensively tested with a laser setup in the Laboratory for InnovativeSilicon Sensors in Torino, while a smaller set of devices have been tested atthe Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measuredspatial resolution ranges between $2.5\; \mu m$ for 70-100 pad-pitch geometryand $17\; \mu m$ with 200-500 matrices, a factor of 10 better than what isachievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show atemporal resolution of $\sim 40\; ps$ for 200-$\mu m$ pitch devices, in linewith the best performances of LGAD sensors at the same gain.

Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data