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We present characterization results of two silicon photomultipliers; theHamamatsu LVR-6050-CN and the Ketek PM3325 WB. With our measurements of thebias dependence of the breakdown probability we are able to draw conclusionsabout the location and spatial extension of the avalanche region. For the KETEKSiPM we find that the avalanche region is located close to the surface. In theHamamatsu SiPM the high-field region is located $0.5\,\mu$m below the surface,while the volume above is depleted almost until the surface. Furthermore, forthe Hamamatsu SiPM we find that charge carriers produced by optical-crosstalkphotons enter a cell below the avalanche region as opposed to an earlier devicewhere most of the photons enter a cell from above. In the here tested Hamamatsudevice the crosstalk photons probably absorb in the bulk and the generatedholes diffuse into the active volume of the cell within 2\,ns and initiate abreakdown. The present paper is an attempt to spur further interest in the useof the bias dependence of the breakdown probability and establish it as astandard tool not only to determine the location of the high-field region butalso to determine the origin of charge carriers relative to the high-fieldregion. With the knowledge of where the charges come from it should be possibleto further improve the optical crosstalk, dark count, and afterpulsingcharacteristics of SiPM.

nuclear instruments and methods in physics research section a accelerators spectrometers detectors and associated equipment

Locating the avalanche structure and the origin of breakdown generating  charge carriers in silicon photomultipliers by using the bias dependent  breakdown probability