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Fondazione Bruno Kessler (FBK, Trento, Italy) has recently delivered itsfirst 50 $\mu$m thick production of Ultra-Fast Silicon Detectors (UFSD), basedon the Low-Gain Avalanche Diode design. These sensors use high resistivitySi-on-Si substrates, and have a variety of gain layer doping profiles anddesigns based on Boron, Gallium, Carbonated Boron and Carbonated Gallium toobtain a controlled multiplication mechanism. Such variety of gain layers willallow identifying the most radiation hard technology to be employed in theproduction of UFSD, to extend their radiation resistance beyond the currentlimit of $\phi \sim$ 10$^{15}$ n$_{eq}$/cm$^2$. In this paper, we present thecharacterisation, the timing performances, and the results on radiation damagetolerance of this new FBK production.

First FBK Production of 50$\mu$m Ultra-Fast Silicon Detectors