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High-Voltage Monolithic Active Pixel Sensors (HV-MAPS) based on the 180 nmHV-CMOS process have been proposed to realize thin, fast and highly integratedpixel sensors. The MuPix7 prototype, fabricated in the commercial AMS H18process, features a fully integrated on-chip readout, i.e. hit-digitization,zero suppression and data serialization. It is the first fully monolithicHV-CMOS pixel sensor that has been tested for the use in high irradiationenvironments like HL-LHC. We present results from laboratory and test beammeasurements of MuPix7 prototypes irradiated with neutrons (up to$5.0\cdot10^{15}{\,\rm{n}_{\rm{eq}}/cm^2}$) and protons (up to $7.8\cdot10^{15} \,\rm{protons}/cm^2$) and compare the performance with non-irradiatedsensors. Efficiencies well above 90 % at noise rates below 200 Hz per pixel aremeasured. A time resolution better than 22 ns is measured for all testedsettings and sensors, even at the highest irradiation fluences. The datatransmission at 1.25 Gbit/s and the on-chip PLL remain fully functional.

Irradiation study of a fully monolithic HV-CMOS pixel sensor design in AMS 180 nm