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Edge-TCT and charge collection measurements with passive test structures madein LFoundry 150 nm CMOS process on p-type substrate with initial resistivity ofover 3 k$\Omega$cm are presented. Measurements were made before and afterirradiation with reactor neutrons up to 2$\cdot$10$^{15}$n$_{\mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700$\mu$m) with substrate biased through the implant on top and thinned (200$\mu$m) with processed and metallised back plane.  Depleted depth was estimated with Edge-TCT and collected charge was measuredwith $^{90}$Sr source using an external amplifier with 25 ns shaping time.Depleted depth at given bias voltage decreased with increasing neutron fluencebut it was still larger than 70 $\mu$m at 250 V after the highest fluence.After irradiation much higher collected charge was measured with thinneddetectors with processed back plane although the same depleted depth wasobserved with Edge-TCT. Most probable value of collected charge of over 5000electrons was measured also after irradiation to 2$\cdot$10$^{15}$n$_{\mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation ofthese detectors at the outer layer of the pixel detector in the ATLASexperiment at the upgraded HL-LHC.

Charge collection properties of irradiated depleted CMOS pixel test structures