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In this work, two particular properties of the position-sensitive, thicksilicon detectors (known as the "E" detectors) in the High Resolution Array(HiRA) are investigated: the thickness of the dead layer on the front of thedetector, and the overall thickness of the detector itself. The dead layerthickness for each E detector in HiRA is extracted using a measurement of alphaparticles emitted from a $^{212}$Pb pin source placed close to the detectorsurface. This procedure also allows for energy calibrations of the E detectors,which are otherwise inaccessible for alpha source calibration as each one issandwiched between two other detectors. The E detector thickness is obtainedfrom a combination of elastically scattered protons and an energy-losscalculation method. Results from these analyses agree with values provided bythe manufacturer.

On Determining Dead Layer and Detector Thicknesses for a Position-Sensitive Silicon Detector