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Deep sub micron HV-CMOS processes offer the opportunity for sensors built byindustry standard techniques while being HV tolerant, making them goodcandidates for drift-based, fast collecting, thus radiation-hard pixeldetectors. For the upgrade of the ATLAS Pixel Detector towards the HL-LHCrequirements, active pixel sensors in HV-CMOS technology were investigated.These implement amplifier and discriminator stages directly in insulating deepn-wells, which also act as collecting electrodes. The deep n-wells allow forbias voltages up to 150V leading to a depletion depth of several 10um.Prototype sensors in the ams H18 180nm and H35 350nm HV-CMOS processes havebeen manufactured, acting as a potential drop-in replacement for the currentATLAS Pixel sensors, thus leaving higher level processing such as triggerhandling to dedicated read-out chips.  Sensors were thoroughly tested in lab measurements as well as in testbeamexperiments. Irradiation with X-rays and protons revealed a tolerance toionizing doses of 1Grad. An enlarged depletion zone of up to 100um thicknessafter irradiation due to the acceptor removal effect was deduced from Edge-TCTstudies. The sensors showed high detection efficiencies after neutronirradiation to 1e15 n_eq cm-2 in testbeam experiments.  A full reticle size demonstrator chip, implemented in the H35 process isbeing submitted to prove the large scale feasibility of the HV-CMOS concept.

Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade