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This paper reports the last technological development on the Low GainAvalanche Detector (LGAD) and introduces a new architecture of these detectorscalled inverse-LGAD (iLGAD). Both approaches are based on the standardAvalanche Photo Diodes (APD) concept, commonly used in optical and X-raydetection applications, including an internal multiplication of the chargegenerated by radiation. The multiplication is inherent to the basic n++-p+-pstructure, where the doping profile of the p+ layer is optimized to achievehigh field and high impact ionization at the junction. The LGAD structures areoptimized for applications such as tracking or timing detectors for high energyphysics experiments or medical applications where time resolution lower than 30ps is required. Detailed TCAD device simulations together with the electricaland charge collection measurements are presented through this work.

Recent Technological Developments on LGAD and iLGAD Detectors for Tracking and Timing Applications