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The LHCb experiment is preparing for a major upgrade in 2018-2019. One of thekey components in the upgrade is a new silicon tracker situated upstream of theanalysis magnet of the experiment. The Upstream Tracker (UT) will consist offour planes of silicon strip detectors, with each plane covering an area ofabout 2 m$^2$. An important consideration of these detectors is theirperformance after they have been exposed to a large radiation dose. In thisarticle we present test beam results of pre-prototype n-in-p and p-in-n sensorsthat have been irradiated with fluences up to $4.0\times10^{14}$ $n_{\rm eq}$cm$^{-2}$.

Testbeam studies of pre-prototype silicon strip sensors for the LHCb UT upgrade project