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In this work we propose the application of an enhanced radiation damage modelbased on the introduction of deep level traps / recombination centers suitablefor device level numerical simulation of silicon detectors at very highfluences (e.g. 2.0x10E16 1 MeV equivalent neutrons/cm2). We present thecomparison between simulation results and experimental data for p-typesubstrate structures in different operating conditions (temperature and biasingvoltages) for fluences up to 2.2x10E16 neutrons/cm2. The good agreement betweensimulation findings and experimental measurements fosters the application ofthis modeling scheme to the optimization of the next silicon detectors to beused at HL-LHC.

Modeling of Radiation Damage Effects in Silicon Detectors at High Fluences HL-LHC with Sentaurus TCAD