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CMOS Pixel Sensors tend to become relevant for a growing spectrum of chargedparticle detection instruments. This comes mainly from their high granularityand low material budget. However, several potential applications require ahigher read-out speed and radiation tolerance than those achieved withavailable devices based on a 0.35 micrometers feature size technology. Thispaper shows preliminary test results of new prototype sensors manufactured in a0.18 micrometers process based on a high resistivity epitaxial layer ofsizeable thickness. Grounded on these observed performances, we discuss adevelopment strategy over the coming years to reach a full scale sensormatching the specifications of the upgraded version of the Inner TrackingSystem (ITS) of the ALICE experiment at CERN, for which a sensitive area of upto about 10 square meters may be equipped with pixel sensors.

Optimisation of CMOS pixel sensors for high performance vertexing and tracking