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Geant4 simulations play a crucial role in the analysis and interpretation ofexperiments providing low energy precision tests of the Standard Model. Thispaper focuses on the accuracy of the description of the electron processes inthe energy range between 100 and 1000 keV. The effect of the differentsimulation parameters and multiple scattering models on the backscatteringcoefficients is investigated. Simulations of the response of HPGe andpassivated implanted planar Si detectors to \beta{} particles are compared toexperimental results. An overall good agreement is found between Geant4simulations and experimental data.

Performance of Geant4 in simulating semiconductor particle detector response in the energy range below 1 MeV