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In view of the LHC upgrade phases towards HL-LHC, the ATLAS experiment plansto upgrade the Inner Detector with an all-silicon system. The n-on-p silicontechnology is a promising candidate for the pixel upgrade thanks to itsradiation hardness and cost effectiveness, that allow for enlarging the areainstrumented with pixel detectors. We report on the development of novel n-in-pedgeless planar pixel sensors fabricated at FBK (Trento, Italy), making use ofthe "active edge" concept for the reduction of the dead area at the peripheryof the device. After discussing the sensor technology and fabrication process,we present device simulations (pre- and post-irradiation) performed fordifferent sensor configurations. First preliminary results obtained with thetest-structures of the production are shown.

nuclear instruments and methods in physics research. section a, accelerators, spectrometers, detectors and associated equipment/nuclear instruments and methods in physics research. section a, accelerators, spectrometers, detectors and associated equipment

Novel Silicon n-on-p Edgeless Planar Pixel Sensors for the ATLAS upgrade