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Pixel detectors with cylindrical electrodes that penetrate the siliconsubstrate (so called 3D detectors) offer advantages over standard planarsensors in terms of radiation hardness, since the electrode distance isdecoupled from the bulk thickness. In recent years significant progress hasbeen made in the development of 3D sensors, which culminated in the sensorproduction for the ATLAS Insertable B-Layer (IBL) upgrade carried out at CNM(Barcelona, Spain) and FBK (Trento, Italy). Based on this success, the ATLASForward Physics (AFP) experiment has selected the 3D pixel sensor technologyfor the tracking detector. The AFP project presents a new challenge due to theneed for a reduced dead area with respect to IBL, and the in-homogeneous natureof the radiation dose distribution in the sensor. Electrical characterizationof the first AFP prototypes and beam test studies of 3D pixel devicesirradiated non-uniformly are presented in this paper.

Beam Test Studies of 3D Pixel Sensors Irradiated Non-Uniformly for the ATLAS Forward Physics Detector