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The collection of charge carriers generated in p+n strip sensors close to theSi-SiO2 interface before and after 1 MGy of X-ray irradiation has beeninvestigated using the transient current technique with sub-nanosecond focusedlight pulses of 660 nm wavelength, which has an absorption length of 3.5 um insilicon at room temperature. The paper describes the measurement and analysistechniques used to determine the number of electrons and holes collected.Depending on biasing history, humidity and irradiation, incomplete collectionof either electrons or holes is observed. The charge losses change with time.The time constants are different for electrons and holes and increase by twoorders of magnitude when reducing the relative humidity from about 80 % to lessthan 1 %. An attempt to interpret these results is presented.

Time dependence of charge losses at the Si-SiO2 interface in p+n-silicon strip sensors