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A 1M- and a 4M-pixel monolithic CMOS active pixel sensor with 9.5x9.5micron^2 pixels have been developed for direct imaging in transmission electronmicroscopy as part of the TEAM project. We present the design and a fullcharacterisation of the detector. Data collected with electron beams at variousenergies of interest in electron microscopy are used to determine the detectorresponse. Data are compared to predictions of simulation. The line spreadfunction measured with 80 keV and 300 keV electrons is (12.1+/-0.7) micron and(7.4+/-0.6) micron, respectively, in good agreement with our simulation. Wemeasure the detection quantum efficiency to be 0.78+/-0.04 at 80 keV and0.74+/-0.03 at 300 keV. Using a new imaging technique, based on single electronreconstruction, the line spread function for 80 keV and 300 keV electronsbecomes (6.7+/-0.3) micron and (2.4+/-0.2) micron, respectively. The radiationtolerance of the pixels has been tested up to 5 Mrad and the detector is stillfunctional with a decrease of dynamic range by ~30%, corresponding to areduction in full-well depth from ~39 to ~27 primary 300 keV electrons, due toleakage current increase, but identical line spread function performance.

Characterisation of a CMOS Active Pixel Sensor for use in the TEAM Microscope