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This paper presents the design and test results of a prototype monolithicpixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator(SOI) CMOS technology. In the SOI technology, a thin layer of integratedelectronics is insulated from a (high-resistivity) silicon substrate by aburied oxide. Vias etched through the oxide allow to contact the substrate fromthe electronics layer, so that pixel implants can be created and a reverse biascan be applied. The prototype chip, manufactured in OKI 0.15 micron SOIprocess, features both analog and digital pixels on a 10 micron pitch. Resultsof tests performed with infrared laser and 1.35 GeV electrons and a firstassessment of the effect of ionising and non-ionising doses are discussed.

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels