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Electronic transport in narrow gap semiconductors is characterized byspontaneous vertical transitions between carriers in the valence and conductionbands, a phenomenon also known as Zener tunneling. However, this effect is notcaptured by existing models based on the Boltzmann transport equation. In thiswork, we propose a new fully first principles model for electronic transportusing the Wigner distribution function and implement it to solve the equationsof motion for electrons. The formalism generalizes the Boltzmann equation tomaterials with strong interband coupling and include transport contributionsfrom off-diagonal components of the charge current operator. We illustrate themethod with a study of Bi$_2$Se$_3$, showing that interband tunneling dominatesthe electron transport dynamics at experimentally relevant small dopingconcentrations, a behavior that is likely shared with other semiconductors,including topological insulators. Surprisingly, Zener tunneling occurs alsobetween band subvalleys separated by energy much larger than the band gap.

Interband tunneling effects on materials transport properties using the first principles Wigner distribution