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We examine the effects of the low-level substitution of S atoms by C and Siatoms on the superconductivity of H$_3$S with the $Im\bar{3}m$ structure atmegabar pressure. The hole doping can fine-tune the Fermi energy to reach theelectronic density-of-states peak maximizing the electron-phonon coupling. Thiscan boost the critical temperature from the original 203 K to 289 K and 283 K,respectively, for H$_3$S$_{0.962}$C$_{0.038}$ at 260 GPa andH$_3$S$_{0.960}$Si$_{0.040}$ at 230 GPa. The former may provide an explanationfor the recent experimental observation of room-temperature superconductivityin a highly compressed C-S-H system [Nature 586, 373-377 (2020)]. Our workopens a new avenue for substantially raising the critical temperatures ofhydrogen-rich materials.

Hole-Doped Room-Temperature Superconductivity in H$_{3}$S$_{1-x}$Z$_x$ (Z=C, Si)