English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Zendy Tools

Zendy Open

Cubic boron arsenide (BAs) is attracting greater attention due to the recentexperimental demonstration of ultrahigh thermal conductivity \k{appa} above1000 W/mK. However, its bandgap has not been settled and a simple yet effectivemethod to probe its crystal quality is missing. Furthermore, traditional\k{appa} measurement methods are destructive and time consuming, thus theycannot meet the urgent demand for fast screening of high \k{appa} materials.After we experimentally established 1.82 eV as the indirect bandgap of BAs andobserved room-temperature band-edge photoluminescence, we developed two newoptical techniques that can provide rapid and non-destructive characterizationof \k{appa} with little sample preparation: photoluminescence mapping(PL-mapping) and time-domain thermo-photoluminescence (TDTP). PL-mappingprovides nearly real-time image of crystal quality and \k{appa} over mm-sizedcrystal surfaces; while TDTP allows us to pick up any spot on the samplesurface and measure its \k{appa} using nanosecond laser pulses. These newtechniques reveal that the apparent single crystals are not only non-uniform in\k{appa}, but also are made of domains of very distinct \k{appa}. BecausePL-mapping and TDTP are based on the band-edge PL and its dependence ontemperature, they can be applied to other semiconductors, thus paving the wayfor rapid identification and development of high-\k{appa} semiconductingmaterials.

Photoluminescence mapping and time-domain thermo-photoluminescence for rapid imaging and measurement of thermal conductivity of boron arsenide