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In this work, the electrical properties of Al2O3 films deposited by reactiveion sputtering were investigated by means of morphological, chemical andelectrical characterizations. This insulating layer suffers of an electrontrapping that is mitigated after the rapid thermal annealing (RTA). The RTAimproved also the permittivity (up to 6{\epsilon}0), although the negativefixed charge remains in the order of 1012cm-2. However, the temperaturedependent electrical investigation of the MOS capacitors demonstrates that theroom temperature Fowler-Nordheim electron barrier height of 2.37 eV liesbetween the values expected for SiO2/4H-SiC and Al2O3/4H-SiC systems.

Properties of Al2O3 thin films deposited on 4H-SiC by reactive ion sputtering