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This paper presents the preliminary results of optical characterization usingspectroscopic ellipsometry of wurtzite indium gallium nitride (InxGa1-xN) thinfilms with medium indium content (0.38<x<0.68) that were deposited on silicondioxide using plasma-enhanced evaporation. A Kramers-Kronig consistentparametric analytical model using Gaussian oscillators to describe theabsorption spectra has been developed to extract the real and imaginarycomponents of the dielectric function ({\epsilon}1, {\epsilon}2) of InxGa1-xNfilms. Scanning electron microscope (SEM) images are presented to examine filmmicrostructure and verify film thicknesses determined from ellipsometrymodelling. This fitting procedure, model, and parameters can be employed in thefuture to extract physical parameters from ellipsometric data from otherInxGa1-xN films.

Analytical Model for the Optical Functions of Indium Gallium Nitride with Application to Thin Film Solar Photovoltaic Cells