English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Zendy Plus

Presents the zaia usage as premium feature

ZAIA

Presents the pdf analysis as premium feature

PDF Analysis

Insights

Presents the summarisation as premium feature

Summarisation

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the access of premium content as premium feature

Premium Content

Zendy Tools

Zendy Open

Charge trapping plays an important role for the reliability of electronicdevices and manifests itself in various phenomena like bias temperatureinstability (BTI), random telegraph noise (RTN), hysteresis or trap-assistedtunneling (TAT). In this work we present Comphy v3.0, an open source physicalframework for modeling these effects in a unified fashion using nonradiativemultiphonon theory on a one-dimensional device geometry. Here we give anoverview about the underlying theory, discuss newly introduced featurescompared to the original Comphy framework and also review recent advances inreliability physics enabled by these new features. The usefulness of Comphyv3.0 for the reliability community is highlighted by several practical examplesincluding automatic extraction of defect distributions, modeling of TAT inhigh-k capacitors and BTI/RTN modeling at cryogenic temperatures.

Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices