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This paper discusses the transmission line pulse (TLP) analysis, generallyused for electrostatic discharge (ESD) device characterization, as highpotential usable tool also for non-ESD structures. TLP technique, combined withDC and pulsed I-V characterization, is performed to study the contribution oftrap states on current conduction in metal-insulator-metal (MIM) capacitorswith an HfAlO stack. The importance of the above mentioned methods isdemonstrated by comparing two generations of samples with slightly differentcharge trapping mechanisms; their impact on the current conduction isfurthermore studied by decreasing the pulse width down to 50nsec. TLP analysisis finally discussed as interesting method to investigate the influence of trapstates on the device robustness. The evaluation of breakdown voltage fordifferent time pulses allows to discriminate whether different failuremechanisms occur or not and to establish the impact of trap states onshort-term reliability.

Transmission Line Pulse (TLP) as integrative method for the investigation of ultra-fast trapping mechanisms on high-k MIM