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We report on a direct measurement of cation and anion sub-lattice strain inan InAs/GaSb type-II strained layer superlattice (T2SLs) using atomicresolution Z-contrast imaging and advanced image processing. Atomic columnpositions in InAs and GaSb are determined by separating the cation and anionpeak intensities. Analysis of the InAs/GaSb T2SLs reveals the compressivestrain in the nominal GaSb layer and tensile strain at interfaces betweenconstituent layers, which indicate In incorporation into the nominal GaSb layerand the formation of GaAs like interfaces, respectively. The results arecompared with the model-dependent X-ray diffraction measurements in terms ofinterfacial chemical intermixing and strain. Together, these techniques providea robust measurement of atomic-scale strain which is vital to determine T2SLproperties.

Peak separation method for sub-lattice strain analysis at atomic resolution: Application to InAs/GaSb superlattice