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Ultra-low-k (ULK) materials are essential for today's production ofintegrated circuits (ICs). However, during the manufacturing process the ULK'slow dielectric constant (k-value) increases due to the replacement ofhydrophobic species with hydrophilic groups. We investigate the use of plasmaenhanced fragmented silylation precursors to repair this damage. Thefragmentation of the silylation precursors octamethylcyclotetrasiloxane (OMCTS)and bis(dimethylamino)-dimethylsilane (DMADMS) and their possible repairreactions are studied using density functional theory (DFT) and moleculardynamics (MD) simulations.

Theoretical investigation of in situ k-restore processes for damaged ultra-low-k dielectrics