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Inductively Coupled Plasma (ICP) etching of amorphous silicon (a-Si)nanostructures using a continuous C4F8/SF6 plasma over nanotopography insilicon dioxide (SiO2) is investigated. The coil power of the ICP system isused to tune the a-Si etch rate from 20 to 125 nm/min. The etch rates of a-Si,SiO2 and electroresist are measured depending on the SF6 ratio, platen powerand chamber pressure and used to optimize the a-Si:SiO2 etch selectivity. Theresults on nanostructures show that the presence of an insulating etch-stoplayer affects the passivation ratio required to achieve vertical sidewalls. Alow pressure is also necessary in order to etch the silicon nanostructureembedded into the oxide nanotrenches to form a highly conformable a-Sinanowire. We argue that both of these behaviors could be explained by surfacecharging effects. Finally, etching of 20 nm a-Si nanowires that cross 15 nmtrenches in oxide with vertical sidewalls and a 4.3:1 a-Si:SiO2 etchselectivity is demonstrated. This etching process can be used in applicationswhere nanotopography is present such as single electron transistors ormultigate transistors.

Inductively Coupled Plasma etching of amorphous silicon nanostructures over nanotopography using C4F8/SF6 chemistry