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Damages are created in a sacrificial layer of silicon dioxide by ionimplantation to enhance the etch rate of silicon-dioxide in liquid and vaporphase hydrofluoric acid. The etch rate ratio between implanted and unimplantedsilicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This featureis of interest to greatly reduce the underetch of microelectromechanicalsystems anchors. Based on the experimentally extracted etch rate of unimplantedand implanted silicon dioxide, the patterning of the sacrificial layer can bepredicted by simulation.

Anisotropic Vapor HF etching of silicon dioxide for Si microstructure release