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We argue that because of valence-fluctuation caused dynamical changes(fluctuations) of impurity energies in an impurity band of valence fluctuatingsemiconductors both occupied and unoccupied sites can be found in the impurityband above as well as below the Fermi level even in the ground state. As aconsequence, the ground state energy distribution function of the subsystem oflocalized charge carriers for valence fluctuating semiconductors isqualitatively different than one for conventional semiconductors at T = 0 K,what sheds new light on interpretation of experimental results of valencefluctuating semiconductors, e.g. SmB6 and YbB12, at lowest temperatures.

SmB6: A material with anomalous energy distribution function of charge carriers?