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Graphene, due to its unique electronic structure favoring high carriermobility, is considered a promising material for use in high-speed electronicdevices in the post-silicon electronic era. For this reason, experimentalresearch on graphene-based field-effect transistors (GFETs) has rapidlyincreased in the last years. However, despite the continuous progress in theoptimization of such devices many critical issues remain to be solved such astheir reproducibility and performance uniformity against possible variationsoriginated by the manufacturing processes or the operating conditions. In thepresent work, changes of the ID-VDS characteristics of a Graphene Field-EffectTransistors, caused by a tolerance of 10% in the active channel (i.e. itslength and width) and in the top oxide thickness are numerically investigatedin order to assess the reliability of such devices. Design of Experiments (DoE)is adopted with the aim to identify the most influential factors on theelectrical performance of the device, so that the fabrication process may besuitably optimized.

Sensitivity Analysis of a Graphene Field-Effect Transistors by means of Design of Experiments